WBN13003B
300
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■
Very High Switching Speed
■
High Voltage Capability
■
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching
characteristics required such as
lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector -Emitter Voltage
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
600
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
1.5
30
-40~150
-40~150
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
4.16
89
Units
℃/W
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
