WBN13003B2D
13003B2D
Electrical Characteristics
(Tc=25℃
Symbol
V
CEO(sus)
V
CE(sat)
V
BE(sat)
I
CBO
I
CEO
I
EBO
hFE
f
T
ton
ts
tf
V
F
unless otherwise noted)
Parameter
Collector-Emitter Breakdown Voltage
Collector -Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector -Base Cutoff Current
Collector -EmitterCutoff Current
Emitter -Base Cutoff Current
DC Current Gain
Test Conditions
Ic=10mA,Ib=0
Ic=0.2A,Ib=40mA
Ic=0.2A,Ib=40mA
Vcb=600V Ie=0
Vce=400V Ib=0
Veb=7V Ic=0
Vce=10V,Ic=10mA
Vce=10V Ic=50mA
Value
Min
400
-
-
-
-
-
10
5
Typ
-
-
-
-
-
-
-
-
0.2
Max
-
0.3
1.2
0.1
0.25
0.1
30
-
1.0
4.0
0.4
1.8
Units
V
V
V
mA
mA
mA
Characteristic frequency
Turn -on Time
Storage Time
Fall Time
Diode Forward Voltage
F=1MHz
Vcc=5V, Ic=0.25A
MHz
1.5
-
0.15
µs
I
F
=0.6A
V
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
