STU4A60
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
High Commutation dv/dt
High Junction temperature(T
J
=150℃)
General Description
Sensitive gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
A1
A2
G
TO-251
Absolute Maximum Ratings
(T
=
J
25°C unless otherwise specified)
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
2
Para
mete
Repetitive Peak Off-State Voltage
r
R.M.S On-State Current
Surge On-State Current
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Condition
Ratings Units
600
V
A
A
A2 s
W
W
A
V
℃
℃
T
J
= 1118 °C
4.0
18/20
1.67
1.5
0.1
1.0
7.0
-40~+150
-40~+150
50/60Hz, One cycle, Peak value, non-repetitiv
e
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Value
3
75
Units
℃/W
℃/W
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Jan 2009. Rev. 0
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T02-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
