STN1A60
Electrical Characteristics
(T
J
= 25°C unless otherwise specified)
ectr
tri
Cha act ris tics
Symbol
I
DRM
V
TM
Characteristics
Peak Forward or Reverse Blocking Current
(V
D
= V
DRM
/V
RRM,
gate open)
Forward “On” Voltage
(I
TM
= 1.5 A)
T
J
=25℃
T
J
=125℃
(Note2)
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Min
-
-
-
-
-
-
-
-
-
-
-
0.2
10
-
T2+G+
T2+G-
T2-G-
T2-G+
-
-
-
-
-
Typ.
-
-
1.2
0.4
1.3
1.4
3.8
-
-
-
-
-
20
1.3
1.2
4.0
1.0
2.5
-
Max
5
500
1.5
5
5
5
7
1.2
1.2
1.2
1.5
-
-
5
5
8
5
8
420
Unit
μA
V
Gate Trigger Current (Continuous dc)
I
GT
(V
D
= 12 Vdc, RL = 33 Ω)
Gate Trigger Voltage (Continuous dc)
(V
D
=12 Vdc, RL = 33 Ω)
Gate threshold voltage(T
J
=125℃, V
D
=V
DRM
,R
L
=3.3KΩ)
mA
V
GT
V
V
GD
dV/dt
I
H
V
V/μs
mA
Critical rate of rise of commutation Voltage (V
D
=0.67V
DRM
,gate open)
Holding Current
(V
D
=12 V, I
GT
= 100 mA)
I
L
latching current (V
D
= 12 V; I
GT
= 100 mA)
mA
R
d
Dynamic resistance
(T
J
=125℃)
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
