STN1A80
Logic Level
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 800V
■ R.M.S On-State Current(I
T(RMS
)=1A
■ Low on-state voltage: V
TM
=1.2(typ.)@ I
TM
■ Low reverse and forward blocking current:
I
DRM
=500uA@TC=125℃
■ Low holding current: I
H
=4mA (typ.)
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to
microcontrollers,logic integrated circuits and other low power
gate trigger circuits such as fan speed and temperature
modulation control, lighting control and static switching relay.
Absolute Maximum Ratings
(T
J
=25℃ unless otherwise specified)
Symbol
V
DRM
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TL=50℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
Value
800
1
9.1/10
0.41
5
0.1
50
0.5
6
-40 ~ 125
-40~150
2
W
W
A/μs
A
V
℃
℃
g
Units
V
A
A
T
(RMS)
I
TSM
P
GM
P
G(AV)
dI/dt
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
T
J
=125℃
ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/ms
Peak Gate Current — Forward, Tj = 125°C (20 μs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 μs, 120 PPS)
Junction Temperature
Storage Temperature
mass
I
FGM
V
RGM
T
J,
T
stg
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
ThermalResistance,J
unction-to-Ambient
Min
-
-
Value
Typ
Max
-
-
60
120
Units
℃/W
℃/W
1 /5
.
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