SFP840
Silicon N-Channel MOSFET
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 59nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
1.0
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
5.1
32
±30
320
13.4
3.5
134
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
500
8
Units
V
A
Channel
Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Value
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Min
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
-
-
Typ
-
0.5
-
Max
0.93
-
62
℃/W
℃/W
℃/W
Units
Rev.A Nov.2010
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