SFP830
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS =500 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
Symbol
IGSS
Min
-
Type
Max
Unit
nA
V
-
-
-
-
±100
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
IDSS
±30
-
-
1
-
μA
V
Drain−source breakdown voltage
V(BR)DSS
500
ΔBVDSS
ΔTJ
VGS(th)
RDS(ON)
gfs
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
-
0.55
-
V/℃
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID =2.25A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
V
Ω
S
1.16
4.2
800
76
1.5
Ciss
Crss
Coss
tr
1050
100
22
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
f = 1 MHz
17
Rise time
15
40
VDD =250 V,
ID = 4.5 A
RG=25 Ω
Turn−on time
Switching time
ton
40
90
ns
Fall time
tf
85
180
100
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
45
VDD = 400 V,
VGS = 10 V,
ID = 4.5 A
Qg
-
32
44
nC
Gate−source charge
Qgs
Qgd
-
-
3.7
15
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Symbol
IDR
Test Condition
Min
Type
Max
4.5
18
1.4
-
Unit
-
-
-
-
-
-
-
-
-
A
A
IDRP
VDSF
trr
IDR = 4.5 A, VGS = 0 V
IDR =4.5 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
305
2.6
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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