SFP740
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Break voltage Temperature
Coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge(gate-source
Qg
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qgs
Qgd
V
GS
=10V,
nC
I
D
=10A
(Note4,5)
-
-
7
27
-
-
tf
toff
V
DD
=320V,
-
45
71
R
G
=25Ω，
(Note4,5)
-
-
125
85
260
180
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
△BV
DSS
/
△T
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
Test Condition
V
GS
=±30V,V
DS
=0V
I
G
=±10 µA,V
DS
=0V
V
DS
=400V,V
GS
=0V
I
D
=250 µA,V
GS
=0V
I
D
=250µA, Referenced
Min
-
±30
-
400
-
Type
-
-
-
-
0.4
-
0.48
9.6
1400
36
150
20
80
Max
±100
-
25
-
-
4
0.55
-
1800
46
195
50
170
Unit
nA
V
µA
V
V/℃
V
Ω
S
to 25℃
V
DS
=10V,I
D
=250 µA
V
GS
=10V,I
D
=5A
V
DS
=40V,I
D
=5A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
DD
=200V,
I
D
=10A，
2
-
-
-
-
-
-
-
pF
ns
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
Test Condition
-
-
I
DR
=10A,V
GS
=0V
I
DR
=10A,V
GS
=0V,
dI
DR
/ dt =100 A / µs
Min
-
-
-
-
-
Type
-
-
1.4
330
3.57
Max
10
40
1.5
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=7.9mH I
AS
=10A,V
DD
=50V,R
G
=0Ω ,Starting T
J
=25℃
3.I
SD
≤10A,di/dt≤300A/us,V
DD
<BV
DSS
,STARTING T
J
=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
