SFP630
Electrical Characteristics (Tc = 25°C)
Characteristics
Test Condition
Symbol
IGSS
Min Type Max Unit
Gate leakage current
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 200 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
-
-
-
-
-
±100
nA
V
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
IDSS
±30
-
-
10
-
μA
V
Drain−source breakdown voltage V(BR)DSS
200
ΔBVDSS
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
-
0.2
-
V/℃
ΔTJ
Gate threshold voltage
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 5.4A
VDS = 50 V, ID =5.4A
VDS = 25 V,
2
-
-
4
V
Ω
S
Drain−source ON resistance
Forward Transconductance
Input capacitance
-
0.4
3.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
240
76
9.4
28
39
20
Reverse transfer capacitance
VGS = 0 V,
pF
f = 1 MHz
Output capacitance
Rise time
VDD =100 V,
ID = 5.9 A
RG=12 Ω
Turn−on time
ton
Switching time
ns
Fall time
tf
Turn−off time
(Note4,5)
toff
Total gate charge (gate−source
plus gate−drain)
VDD = 160 V,
VGS = 10 V,
ID = 5.9 A
Qg
-
43
-
nC
Gate−source charge
Qgs
Qgd
-
-
7
-
-
(Note4,5)
Gate−drain (“miller”) Charge
23
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Test Condition
Symbol
Min Type Max Unit
Continuous drain reverse current IDR
-
-
-
-
-
-
-
-
9
A
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDRP
VDSF
trr
-
36
A
IDR = 9 A, VGS = 0 V
IDR = 5.9A, VGS = 0 V,
dIDR / dt = 100 A / μs
1.4
170
1.1
2.0
340
2.2
V
ns
Qrr
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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