SFP50N06
Silicon N-Channel MOSFET
Features
■
R
DS(on)
(Max 22mΩ)@V
GS
=10V
■
Ultra-low Gate Charge(Typical 31nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based
process.This technology improves the performances compared with
standard parts from various sources. All of these power MOSFETs are
designed for applications in switching regulators, switching convertors,
motor and relay drivers, and drivers for high power bipolar switching
transistors demanding high speed and low gate drive power.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature (for 10 seconds)
(Note 2)
(Note 2)
(Note 3)
(Note1)
Parameter
Value
60
50
38
200
±25
480
13
5.8
130
1.3
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
Qcs
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Thermal Resistance, Junction-to-Ambient
Min
-
Value
Typ
-
0.5
Max
0.96
Units
℃/W
℃/W
-
-
62.5
℃/W
Rev, c Nov.2008
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
