SFP3710G
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±20V,VDS=0V
IG=±10 µA,VDS=0V
VDS=100V,VGS=0V
ID=250 µA,VGS=0V
ID=1mA, Referenced to
25℃
Min Type Max Unit
Gate leakage current
-
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
IDSS
±30
-
-
20
-
µA
V
Drain -source breakdown voltage
Break voltage Temperature
Coefficient
V(BR)DSS
100
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
-
0.1
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=10V,ID=250 µA
VGS=10V,ID=35A
VDS=50V,ID=35A
VDS=25V,
2
-
-
-
-
-
-
-
-
-
-
-
4
18
-
V
mΩ
S
35
Ciss
2990
3000
160
18
-
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
-
pF
ns
f=1MHz
Coss
tr
-
Rise time
VDD=28V,
ID=75A,
RG=6.8Ω,
(Note4,5)
-
Turn-on time
Switching time
ton
86
-
Fall time
tf
47
-
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
60
-
VDD=80V,
VGS=10V,
ID=35A
Qg
-
1180
-
nC
Gate-source charge
Qgs
Qgd
-
-
190
300
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
59
240
1.5
75
A
A
IS=35A,VGS=0V
IDR=75A,VDD=25V,
dIDR / dt =100 A / µs
-
V
56
106
ns
µC
Reverse recovery charge
Qrr
160
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=50µH IAS=59A,VDD=50V,RG=25Ω ,Starting TJ=25℃
3.ISD≤59A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance