SFF740
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=400V,VGS=0V
ID=250 µA,VGS=0V
ID=250µA, Referenced
to 25℃
Min Type Max Unit
Gate leakage current
-
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
IDSS
±30
-
-
25
-
µA
V
Drain -source breakdown voltage
Break voltage Temperature
Coefficient
V(BR)DSS
400
△ BVDSS
△ TJ
VGS(th)
RDS(ON)
gfs
/
V/℃
-
0.4
-
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=10V,ID=250 µA
VGS=10V,ID=5A
VDS=40V,ID=5A
VDS=25V,
2
-
-
-
-
-
-
-
-
-
-
0.48
9.6
1400
36
4
0.55
-
V
Ω
S
Ciss
1800
46
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
tr
150
20
195
50
Rise time
VDD=200V,
ID=10A，
Turn-on time
Switching time
ton
80
170
260
180
RG=25Ω，
Fall time
tf
125
85
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=320V,
VGS=10V,
ID=10A
Qg
-
60
71
nC
Gate-source charge
Qgs
Qgd
-
-
7
-
-
(Note4,5)
Gate-drain("miller") Charge
27
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Symbol
IDR
Test Condition
Min Type Max Unit
-
-
-
-
-
-
-
-
-
10
40
1.5
-
A
A
IDRP
VDSF
trr
IDR=10A,VGS=0V
IDR=10A,VGS=0V,
dIDR / dt =100 A / µs
1.4
330
3.57
V
Reverse recovery time
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
