SFF5N60
Silicon N-Channel MOSFET
Features
�½
�½
�½
�½
�½
4.5A, 600V, R
DS(on)
(Max2.2Ω)@V
GS
=10V
Ultra-low Gate Charge(Typical 16 nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is Produced using Winsemi's advanced
Planar stripe , VDMOS technology . This latest technology has
been especially designed to minimize on-state resistance,have
a high rugged avalanche characteristics.This devices is specially
well suited for half bridge and full bridge resonant topology line
a electronic lamp ballast , high efficiency switched mode power
supplies,active power factor correction
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.26
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note2)
( Note1)
(Note3)
(Note1)
3.0*
20
±30
300
12
4.5
33
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
4.5*
Units
V
A
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
3.79
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
