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SCU4C60S 参数 Datasheet PDF下载

SCU4C60S图片预览
型号: SCU4C60S
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 431 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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SCU4C60S
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
G
A
K
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control cir
cuit
in power tool, inrush current limit circuit and heating control
system.
K
A
G
TO251
TO251
Absolute Maximum Ratings
(T
J
= 25°C unless otherwise specified)
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
T
J
T
STG
Condition arameter
P
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
R.M.S On-State Current(180°
Conduction Angle)
Surge On-State Current
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
T
i
=60 °C
Tamb=25 °C
T
i
=60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Wave
Non-Repetitive
t =10ms
F=60Hz,Tj=125 °C
Condition
Ratings
600
1.35
0.9
4
1.35
33
4.5
50
0.5
Units
V
A
A
A
A
2
s
A/㎲
W
W
A
°C
°C
Tj=125
°C
0.2
1.2A
-40-125
°C
-40-150
°C
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Value
15
100
Units
℃/W
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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