SCH4C60S
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Units
Min
-
Repetitive Peak Off-State Current
VAK=VDRM RGK=1KΩ
-
Peak On-State Voltage (1)
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State Voltage
Holding Current
Latching Current
Dynamic resistance
VD=12V,RL=140
ITM=8A, tp=380㎲
-
20
-
0.1
15
-
6
-
-
-
-
-
-
5
-
100
-
-
-
-
1
1.8
50
0.8
mA
V
μA
V
V
V/㎲
mA
mA
mΩ
Typ
-
Max
5
μA
I
DRM
V
TM
I
GT
V
GT
V
GD
dv/dt
I
H
I
L
R
d
Note:
VD=12V,RL=3.3KΩ, RGK=1 KΩ
VD=67%V
DRM
, RGK=1 KΩ
IT=50mA, RGK=1 KΩ
IT=1mA, RGK=1 KΩ
Tj=125°C
1. Pulse Width = 1.0 ms , Duty cycle
≤
1%
2. R
GK
Current not Included in measurement
2/5
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
