SBW13009-O
SBW13009-O
Electrical Characteristics
Symbol
V
CEO(sus)
Parameter
Collector-Emitter Breakdown Voltage
Test conditions
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Value
Min
400
Typ
-
Max
-
1.0
Units
V
-
-
1.5
3.0
V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
-
Tc=100℃
Ic=5.0A,Ib=1.0A
-
Ic=8.0A,Ib=1.6A
-
-
2.0
1.2
V
V
1.6
V
BE(sat)
Base-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
-
Tc=100℃
-
-
-
-
-
-
4
1.5
10
40
30
10
0.8
V
uA
I
EBO
hFE
ts
tf
f
T
Emitter -Base Cutoff Current
DC Current Gain
Veb=9V,Ic=0V
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
-
10
6
4
Storage Time
Fall Time
Current Gain Band width Product
V
CC
=5.0V,Ic=0.5A
(UI9600)
Vce=10V,Ic=0.5A
µs
MHz
Note :
Pulse Test :Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
