SBR13003A
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value
Units
Symbol
VCEO(sus)
Parameter
Test Conditions
Min Typ Max
Collector -Emitter Breakdown Voltage
Ic=10mA,Ib=0
400
-
-
V
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
0.3
0.5
1.0
Collector-Emitter Saturation Voltage
-
-
V
VCE(sat)
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=700V
1.0
1.2
1.0
5.0
30
Base -Emitter Saturation Voltage
-
-
-
-
V
VBE(sat)
Collector-Base Cutoff Current
(Vbe=-1.5V)
mA
ICBO
Vcb=700V,Tc=100℃
Vce=2V,Ic=0.5A
Vce=2V,Ic=1.0A
10
5
-
-
DC Current Gain
hFE
25
Resistive Load
Turn-on Time
Storage Time
Fall Time
VCC=125V,Ic=1A
IB1=0.2A,IB2=-0.5A
TP=25µs
-
0.2
1.5
1.0
3.0
0.4
ton
ts
µs
µs
0.15
tf
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=
300V
-
-
1.2
4.0
0.3
ts
tf
0.12
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=
300V
-
-
2.4
5.0
0.4
ts
tf
µs
0.15
Tc=100℃
Note :
Pulse test :Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
