SBR13003BD
BR1 300
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■
Very High Switching Speed
■
High Voltage Capability
■
Wide Reverse Bias SOA
symbol
bol
2.Collector
1.Base
3.Emitter
General Description
This Device is designed for high voltage, High speed
switching
characteristics required such as
lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector -Emitter Voltage
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
1.5
20
-40~150
-40~150
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
6.25
89
Units
℃/W
℃/W
Rev.A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
