SBR13003D
130
High Voltage Fast-Switching NPN Power Transistor
olt
st-Sw chi NPN
-Swi
ist
Features
eature
◆
◆
◆
◆
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in freewheeling diode
General Description
escript
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
axi
tin
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
amet
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
Conditio
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
1.5
3.0
0.75
1.5
40
1.2
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
amet
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
3.12
89
Units
℃/W
℃/W
Jan 2009.Rev.0
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
