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SBP5027-R 参数 Datasheet PDF下载

SBP5027-R图片预览
型号: SBP5027-R
PDF下载: 下载PDF文件 查看货源
内容描述: 高压快速开关NPN功率晶体管 [High Voltage Fast-Switching NPN Power Transistor]
分类和应用: 晶体开关晶体管高压
文件页数/大小: 5 页 / 411 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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SBP5027-R
Electrical Characteristics
(T
C
=25
unless otherwise noted)
Symbol
Value
Parameter
Test Conditions
Min
800
Typ
-
Max
-
Units
V
CEO(sus)
Collector-Emitter Breakdown Voltage
Ic=5mA,Ib=0
V
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Ic=1.5A,Ib=0.3A
-
-
-
-
10
8
-
-
-
-
-
-
-
60
2
1.5
10
10
40
-
-
0.5
V
V
μA
Ic=1.5A,Ib=0.3A
Collector-Base Cutoff Current
Emitter
-Base Cutoff Current
Vcb=800V,Ie=0
Veb=5V, Ic=0
Vce=5V,Ic=0.2A
Vce=5V, Ic=1.0A
μA
h
FE
DC Current Gain
Cob
ton
ts
tf
Output Capacitance
Turn on Time
Storage Time
Fall Time
Vcb=10V,f
T
=1MHz
V
CC
=400V
Ic=5I
B1
=-2.5 I
B2
=2A
RL=200Ω
pF
-
-
-
-
3.0
0.3
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.