SBP1710-R
SBP1710-R
High Voltage Fast-Switching NPN Power Transistor
Features
■
■
■
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching
characteristics required such as
lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
(Note)
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
900
500
7
7
14
45
150
-55~150
Units
V
V
V
A
A
W
℃
℃
Rev.A01 Jun.2011
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
T111-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
