SBP13007A
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Symbol
Units
Parameter
Test Conditions
Min Typ Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400
-
-
-
V
0.5
1.0
2.5
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Ic=8.0A,Ib=2.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
-
-
-
-
-
-
-
-
2.5
V
V
1.2
1.6
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
VBE(sat)
1.5
V
Collector-Base Cutoff Current
(Vbe=-1.5V)
1.0
5.0
Vcb=700V
ICBO
mA
Vcb=700V, Tc=100℃
10
5
-
-
40
40
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
hFE
DC Current Gain
Resistive Load
Storage Time
Fall Time
-
V
CC=125V , Ic=5.0A
ts
tf
1.5
3.0
㎲
㎲
㎲
IB1=1.0A ,
Tp=25㎲
IB2=-1.0A
0.17 0.4
Inductive Load
Storage Time
Fall Time
V
CC=15V ,Ic=5A
ts
tf
-
-
0.8
2.0
IB1=1.0A , IB2=-2.5A
L=0.35mH,Vclamp=300V
0.06 0.12
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=1A
IB1=0.4A , IB2=-1.0A
L=0.35mH,Vclamp=300V
Tc=100℃
ts
tf
-
-
1.0
3.0
0.07 0.15
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
