SBP13003H
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value
Symbol
VCEO(sus)
VCE(sat)
Parameter
Test Conditions
Units
Min
530
Typ
Max
-
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Ic=10mA,Ib=0
-
V
V
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=900V
0.5
1.0
1.0
1.5
1.0
5.0
35
-
-
-
-
VBE(sat)
Base -Emitter Saturation voltage
V
Collector Base Cutoff Current
(Vbe=-1.5v)
ICBO
-
mA
Vcb=900V,Tc=100℃
Vce=10V,Ic=0.4A
Vce=10V,Ic=1A
20
6
-
-
hFE
DC Current Gain
35
Resistive Load
Turn-on Time
Storage time
Fall Time
VCC=125V,Ic=1A
IB1=0.2A,IB2=-0.5A
Tp=25µs
ton
ts
0.25
1.32
0.23
1.0
3.0
0.4
µs
-
tf
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
ts
tf
-
-
1.2
4.0
0.3
µs
µs
0.12
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=1A
ts
tf
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
Tc=100℃
-
-
1.8
5.0
0.4
0.16
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
