SBP13009D
High Voltage Fast-Switching NPN Power Transistor
Features
◆
◆
◆
◆
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
12
25
6.0
12
100
2.2
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
℃
/W
℃
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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