SBN13002D
High Voltage Fast-Switching NPN Power Transistor
Features
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Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built -in freewheeling diode
symbol
2.Collector
1.Base
3.Emitter
General Description
This Device is designed for high voltage, high speed
switching characteristics required such as lighting
system, switching mode power supple.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test conditions
V
BE
=0
I
B
=0
I
C
=0
Value
600
400
9.0
1.25
2.5
-
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
-
12
-40~150
-40~150
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
