SBN13003A1
High Voltage Fast-Switching NPN Power Transistor
Features
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
switching Characteristics required such as
system,switching mode power supply.
lighting
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
Total Dissipation at Ta*=25℃
T
J
T
STG
Operation Junction Temperature
Storage Temperature
1.14
-40~150
-40~150
℃
℃
Parameter
Collector-Emitter Voltage
Collector-Emitter voltage
Emitter -Base voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc*=25℃
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
t
P
=5ms
1.5
18
Tc :Case temperature(good cooling)
Ta :Ambient temperature(without heat sink)
Thermal Characteristics
Symbol
R
QJA
Parameter
Thermal Resistance Junction to Ambient
Value
13.6
Units
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
