Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Min Typ
Symbol
Units
Parameter
Test Conditions
Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400
-
-
V
1.0
1.5
3.0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
-
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
-
-
-
-
2.0
V
V
1.2
1.6
I Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
VBE(sat)
Base-Emitter Saturation Voltage
-
-
-
-
1.5
10
V
IEBO
Emitter-Base Cutoff Current
uA
Veb=9V,Ic=0V
10
6
-
-
40
30
Vce=5V, Ic=5.0A
Vce=5V, Ic=8.0A
hFE
DC Current Gain
ts
tf
Storage Time
Fall Time
4
-
-
10
VCC=5.0V , Ic=0.5A
(UI9600)
㎲
0.8
Vce=10V, Ic=0.5A
fT
Current Gain Band with Prouct
4
MHz
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
