SBF13007-O
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
ect
Cha act
Value
Parameter
Collector-Emitter Breakdown Voltage
Test Conditions
Ic=10mA,Ib=0
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic=8.0A,Ib=2.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
Ic=2.0A,Ib=0.4A
V
BE(sat)
Base-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
I
CBO
I
EBO
Collector-Base Cutoff Current
(Vbe=-1.5V)
Emitter -Base Cutoff Current
Vcb=700V
Vcb=700V, Tc=100℃
Veb=9V
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
f
T
ton
ts
tf
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
Symbol
V
CEO(sus)
Min
400
Typ
-
Max
-
1.0
Units
V
-
-
2.0
3.0
V
-
-
2.5
1.2
1.6
1.5
1.0
5.0
1.0
40
40
V
-
-
V
-
-
V
-
-
10
5
-
-
-
-
mA
mA
h
FE
DC Current Gain
4
MHz
Tum on Time
Storage Time
Fall Time
V
CC
=125V ,Ic=5A
I
B1
=I
B2
=-1.0A
R
L
=50Ω
-
-
-
-
-
-
1.6
3.0
0.7
㎲
Note:
Note
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
