MCR100-6
Sensitive Gate
sit
Silicon Controlled Rectifiers
ilico
Rect
Features
eat
■ Sensitive gate trigger current: I
GT
=200uA maximum
■ Low on-state voltage: V
TM
=1.2(typ.)@ I
TM
■ Low reverse and forward blocking current:
I
DRM
/I
PRM
■ Low holding current: I
H
=5mA maximum
General Description
escri tio
rip
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings
(Tj=25℃ unless otherwise specified)
imu
ing
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
dI/dt
I
TM
= 2A; I
G
= 10mA; dI
G
/dt = 100mA/µs
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
Repetitive peak off-state voltage
RMS on-state current (180
o
conduction angles)
Average on-state current (80
o
conduction angles )
Non repetitive surge peak on-state current
tp = 10 ms
I²t Value for fusing
Peak gate power
Critical rate of rise of on-state current
T
J
=125℃
T
J
=125℃
T
J
=125℃
T
J
=125℃
50
0.1
1
5
-40~125
-40~150
A/μs
W
A
V
℃
℃
tp = 8.3 ms
8
0.41
2
A
2
s
W
Parameter
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
Value
400
0.8
0.5
9
Units
V
A
A
A
Note1:
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
Note1:
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
60
150
Units
℃/W
℃/W
Rev. B1 Jun.2009
T01-3