MCR100-8H
MCR10
R100
Sensitive Gate
itiv
Silicon Controlled Rectifiers
Silic Contr olle
ectifi
tifie
Features
Feature
■ High repetitive peak off-state voltage V
DRM
/V
RRM
=800V
■ Sensitive gate trigger current: I
GT
=200uA max.
■ Low on-state voltage: V
TM
=1.4(typ.)@ I
TM
■ Low reverse and forward blocking current:
I
DRM
/I
PRM
■ Low holding current: I
H
=5mA maximum
General Description
Genera Des
Sensitive triggering SCR is suitable for the application
where gate current limited such as microcontrollers, logic
integrated circuits, small motor control, gate driver for large
SCR, sensing and detecting circuits.
General purpose switching and phase control applications
K
G
A
TO-92
Absolute Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Repetitive peak off-state voltage
RMS on-state current (180
o
conduction angles)
Average on-state current (80
o
conduction angles )
Non repetitive surge peak on-state current
tp = 10 ms
I²t Value for fusing
Peak gate power
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
T
J
=25℃
T
A
=25℃
T
A
=25℃
tp = 8.3 ms
8
0.43
0.1
0.01
1
5
-40~125
-40~150
A
2
s
W
W
A
V
℃
℃
Parameter
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
Value
800
0.8
0.5
9
Units
V
A
A
A
Note1:
Although not recommended, off-state voltages up to 900 V may be applied without damage, but the thyristor may
Note1
e1:
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
75
200
Units
℃/W
℃/W
Rev. A1.1
Jun.2011
T12-2
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
