K2698
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge(gate-source
Qg
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qgs
Qgd
V
GS
=10V,
nC
I
D
=18A
(Note4,5)
-
-
12
14
-
-
tf
toff
V
DD
=400V,
-
42
55
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
△BV
DSS
/
△T
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
Test Condition
V
GS
=±25V,V
DS
=0V
I
G
=±10 µA,V
DS
=0V
V
DS
=500V,V
GS
=0V
I
D
=10 mA,V
GS
=0V
I
D
=250µA,Referenced
Min
-
±30
-
500
-
Type
-
-
-
-
0.5
-
0.23
16
2530
11
300
40
150
95
110
Max
±10
-
100
-
-
5
0.27
-
3290
14.3
390
90
310
Unit
nA
V
µA
V
V/℃
V
Ω
S
to 25℃
V
DS
=10V,I
D
=1mA
V
GS
=10V,I
D
=9A
V
DS
=40V,I
D
=9A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
DD
=250V,
I
D
=18A
R
G
=25Ω
(Note4,5)
3
-
-
-
-
-
-
-
-
-
pF
ns
200
230
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
Test Condition
-
-
I
DR
=18A,V
GS
=0V
I
DR
=18A,V
GS
=0V,
dI
DR
/ dt =100 A / µs
Min
-
-
-
-
-
Type
-
-
-
500
5.4
Max
18
72
1.4
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH I
AS
=18A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
3.I
SD
≤18A,di/dt≤200A/us,V
DD
<BV
DSS
,STARTING T
J
=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
