S8050LT1
PLASTIC-ENCAPSULATE TRANSISTORS
TRANSISTOR
（
NPN
）
SOT—23
—
S8050LT1
FEATURES
Power dissipation
0.3
P
CM
:
Collector current
0.5
I
CM
:
Collector-base voltage
V
(BR)CBO
: 40
W（Tamb=25℃）
1. BASE
A
V
2. EMITTER
3. COLLECTOR
ELECTRICAL
CHARACTERISTICS（Tamb=25℃
（
℃
Symbol
voltage
voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
unless otherwise specified）
）
Test
conditions
I
E
=0
MIN
40
25
5
0.1
0.1
0.1
120
50
0.6
1.2
1.4
V
V
350
TYP
MAX
UNIT
V
V
V
Parameter
Collector-base
breakdown
Ic= 100
μ
A，
Collector-emitter breakdown
Emitter-base
breakdown
current
current
current
Ic= 0.1mA， I
B
=0
I
E
=100
μ
A， I
C
=0
V
CB
=40 V ,
I
E
=0
voltage
Collector cut-off
Collector cut-off
Emitter
cut-off
μ
A
μ
A
μ
A
V
CB
=20V , I
E
=0
V
EB
= 5V ,
V
CE
=1V,
V
CE
=1V,
I
C
=0
I
C
= 50mA
I
C
= 500mA
DC
current
gain(note)
H
FE(2)
Collector-emitter saturation
Base-emitter saturation
Base-emitter voltage
voltage
V
CE
(sat)
V
CE
(sat)
V
BE
I
C
=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
I
E
= 100mA
V
CE
=6V,
I
C
= 20mA
150
voltage
Transition
frequency
f
T
f=
30MHz
MHz
CLASSIFICATION OF H
FE(1)
Rank
Range
L
100-200
H
200-350
DEVICE MARKING :
S8050LT1=J3Y
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
WINGS [ WING SHING COMPUTER COMPONENTS ]
