DB3
BI-DIRECTIONAL TRIGGER DIODES
DO-35
玻壳封装双向触发二极管
符号
Symbol
V
BO
参数
Parameter
击穿电压
BREAKDOWN VOLTAGE
测试条件
Test Condition
见图1
SEE FIG 1
型号
外型尺寸
t Package
单�½�
mm
)
Type Min Typ Max Uni
DB-3
DB-4
DB-6
DB-3
DB-4
28
35
56
32
40
60
36
45
70
3
3
4
5
5
10
5
100
V
V
1.8
±
0.2
3.8±0.2
V
0.5
±
0.1
击穿电压对称性
+V
BO
- -V
BO
BREAKDOWN VOLTAGE
SYMMETRY
见图1
29±1
V
SEE FIG 1
DB-6
DB-3
动态回弹电压
±
V
I= IBO to IF=10mA
DYNAMIC BREAKBACK
VOLTAGE
SEE FIG 1
DB-4
DB-6
V
O
I
BO
t
r
输出电压
OUTPUT VOLTAGE
见图2
SEE FIG 2
击穿电流
BREAKDOWN current
A
s
29±1
上升时间
Rise time
见图3
SEE FIG 3
1.5
漏电电流
I
B
Bleakage Current
Vm=0.5V
BO(Max)
见图1
SEE FIG 1
10
A
DO-35尺寸图
单�½�
mm)
极限参数
LIMITING VALUES
符号
Symbol
P
c
I
F
max
T
r
贮存与工�½�结温范围
40 to 125
40 to 110
参数
Parameter
功耗
Power Dissipution On Pented Circuit
Value
Unit
mW
t
a
=
50
t
p
=10 s
120
pps
T
a
40
DB-4
DB-6
150
DB-3
2.0
2.0
16
峰值脉冲电流
A
T
j
Storage and Operation Junction Temperature Range
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
3-1
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