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BUT11 参数 Datasheet PDF下载

BUT11图片预览
型号: BUT11
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管(高压功率开关应用) [NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)]
分类和应用: 晶体开关晶体管高压高电压电源
文件页数/大小: 1 页 / 26 K
品牌: WINGS [ WING SHING COMPUTER COMPONENTS ]
   
BUT11/11A
HIGH VOLTAGE POWER
SWITCHING APPLICATIONS
NPN
SILICON TRANSISTOR
TO-220
ABSOLUTE MAXIMUM RATINGS (T
a
=25°c)
Characteristic
Collector-Emitter Voltage:BUT11
:BUT11A
Collector-Emitter Voltage:BUT11
:BUT11A
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
Symbol
VCES
VCEO
VEBO
IC
IC
IB
IB
PC
Tj
Tstg
Rating
850
1000
400
450
9
5
10
2
4
100
150
-65~150
Unit
V
V
V
V
V
A
A
A
A
W
°c
°c
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
:BUT11
:BUTIIA
:BUT11
:BUTIIA
:BUT11
:BUTIIA
:BUT11
:BUTIIA
Symbol
V
CEO(SUS)
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Test Condition
I
C
=100mA,
I
B
=0
Min
400
450
Typ
Max
Unit
V
V
CE
= 850V , V
EB
=
0
V
CE
= 1000V , V
EB
= 0
V
EB
= 9V ,
I
C
=
0
I
C
=3A,
I
B
=0.6A
I
C
=2.5A,
I
B
=0.5A
I
C
=3A,
I
B
=0.6A
I
C
=2.5A,
I
B
=0.5A
V
CC
= 250V , I
C
=2.5A
I
B1
= I
B2
=0.5A
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
V
mA
mA
µ
A
V
V
V
V
µ
S
µ
S
µ
S
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com