AO4454
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
150
di/dt=800A/µs
120
25ºC
30
125ºC
25
20
I
rm
(A)
15
125ºC
10
25ºC
Q
rr
(nC)
t
rr
(ns)
90
Q
rr
60
30
0
0
5
10
15
20
25
30
I
rm
5
0
24
22
20
18
16
14
12
10
8
6
4
2
0
0
3
di/dt=800A/µs
125ºC
2.5
25ºC
2
1.5
125ºC
25ºC
1
0.5
0
S
5
10
15
20
25
30
I
S
(A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150
I
s
=20A
120
25ºC
Q
rr
(nC)
90
15
60
30
I
rm
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
I
S
(A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
27
24
21
I
rm
(A)
t
rr
(ns)
18
15
12
9
6
3
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
25ºC
S
125º
30
125ºC
25
20
2.5
t
rr
125ºC
I
s
=20A
2
1.5
1
0.5
0
1000
S
40
25ºC
125ºC
10
25ºC
5
0
1000
Rev 1: November 2010
www.aosmd.com
Page 5 of 6
S
t
rr
WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
