万和兴电子有限公司 www.whxpcb.com
AO4447A
30V P-Channel MOSFET
General Description
• The AO4447A uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.This
device is ideal for load switch and battery protection
applications.
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -4.5V)
R
DS(ON)
(at V
GS
= -4V)
ESD Protected
100% UIS Tested
100% Rg Tested
-30V
-17A
< 7m
< 8m
< 9m
SOIC-8
Top View
D
D
D
D
G
G
S
S
S
Bottom View
D
Rg
S
Absolute Maximum Ratings T
J
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Maximum
-30
±20
-17
-13
-160
3.1
2.0
-55 to 150
Typ
31
59
16
Max
40
75
24
Units
V
V
A
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
T
A
=25°
C
T
A
=70°
C
C
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Symbol
T
A
=25°
C
T
A
=70°
C
W
°
C
Units
°
C/W
°
C/W
°
C/W
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Lead
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Rev.2.0: June 2013
www.aosmd.com
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