VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
AC Characteristics (Ta = 0 ~ 70°C, V = V
= 3.3± 0.3V , V = V
= 0V, unless otherwise noted)
SSQ
DD
DDQ
SS
Test Conditions
AC input Levels (VIH/VIL)
2.0 / 0.8V
1ns
Input timing reference level /
Output timing reference level
1.4V
Input rise and fall time
Output load condition
50pF
Note): 1.if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
Output Load Conditions
VDDQ
V
V
DDQ
OUT
Z = 50
W
Device
Under
Test
50PF
Document :1G5-0177
Rev.2
Page7