V23990-P864-F49-PM
V23990-P864-F48-PM
datasheet
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
3000
2500
2000
1500
1000
500
7000
dI0/dt
dIrec/dt
6000
5000
4000
3000
2000
1000
0
dI0/dt
dIrec/dt
0
I
C (A)
R gon ( Ω)
75
0
10
20
30
40
50
60
0
15
30
45
60
T j =
T j =
V R =
I F =
25/150
300
°C
V
25/150
°C
V CE
V GE
R gon
=
300
30
V
A
V
=
±15
16
V
=
V GE =
Ω
±15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
t p / T
1,60
t p / T
D =
R thJH
D =
R thJH =
=
K/W
2,08
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
0,03
0,16
0,67
0,40
0,23
0,12
9,7E+00
9,7E-01
1,5E-01
3,3E-02
6,7E-03
5,5E-04
0,03
0,19
0,81
0,57
0,30
0,18
9,7E+00
8,1E-01
1,3E-01
2,7E-02
5,1E-03
4,7E-04
copyright Vincotech
8
20 Apr. 2015 / Revision 2
VINCOTECH [ VINCOTECH ]
