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V23990-P848-C59-PM 参数 Datasheet PDF下载

V23990-P848-C59-PM图片预览
型号: V23990-P848-C59-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 773 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P848-A58/A59/C58/C59-PM  
preliminary datasheet  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(Ic)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
1,2  
1,2  
Eon  
Eon  
1
1
0,8  
0,6  
0,4  
0,2  
0
0,8  
0,6  
0,4  
0,2  
0
Eon:  
Eoff  
Eon  
Eoff  
Eoff  
Eoff  
R G ( Ω )  
300  
I C (A)  
0
2
4
6
8
0
60  
120  
180  
240  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
°C  
V
°C  
V
25/150  
25/150  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
600  
±15  
64  
600  
±15  
4
V
V
Rgon  
Rgoff  
=
=
A
64  
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter IGBT  
Typical reverse recovery energy loss  
as a function of collector current  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
Erec = f(Ic)  
0,7  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0
Erec  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
Erec  
Erec  
Erec  
0
0
R G ( Ω )  
I C (A)  
2
4
6
8
0
60  
120  
180  
240  
300  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
25/150  
600  
°C  
V
25/150  
600  
±15  
4
°C  
V
=
=
=
=
±15  
V
V
Rgon  
=
64  
A
copyright Vincotech  
6
Revision: 1