V23990-P768-A50-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0012
35
V
V
1,5
1,92
2,37
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
250
120
1200
0
µA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
82,8
89
27
Rise time
27
ns
191,4
269
54,3
124,9
2
2,92
1,74
3,18
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
1950
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
155
Reverse transfer capacitance
Gate charge
115
15
960
35
160
nC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,69
0,46
Phase-Change
Material
K/W
Brake Inverse Diode
Tj=25°C
Tj=150°C
1,2
1,80
1,76
2,2
VF
Diode forward voltage
10
V
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,38
0,91
Phase-Change
Material
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
2,24
2,36
2,9
60
VF
Ir
Diode forward voltage
25
35
V
ꢁA
Reverse leakage current
1200
600
30,8
39,2
146,4
423,1
2,32
4,84
1749
917
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
Rgon=16 ꢀ
Rgon=16 ꢀ
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
di(rec)max
/dt
A/µs
mWs
0,91
1,98
Erec
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,32
0,87
Phase-Change
Material
K/W
copyright Vincotech
5
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