V23990-P767-A-PM
Characteristic Values
Conditions
Vr [V] or
Value
Typ
Parameter
Symbol
Unit
IC [A] or
IF [A] or
V
GE [V] or
VCE [V] or
DS [V]
Tj
Min
Max
VGS [V]
V
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,1
1,05
0,89
0,77
0,004
0,006
1,7
VF
Vto
rt
Forward voltage
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,05
1,1
Ir
1500
mA
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,70
0,46
K/W
Inverter IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th)
VCE(sat)
ICES
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
VCE=VGE
0,0012
35
V
V
1,87
2,28
15
0
0,015
200
1200
0
mA
nA
ꢀ
IGES
20
Rgint
td(on)
tr
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
108
109
18
Turn-on delay time
Rise time
24
ns
220
286
73
112
2,07
3,22
1,78
2,93
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
Eoff
Cies
1950
155
115
200
0,76
0,5
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
pF
nC
Reverse transfer capacitance
Gate charge
QGate
RthJH
RthJC
RthJHT-T
RthJHD-T
±15
960
35
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Coupled thermal resistance transistor-transistor
Coupled thermal resistance diode-transistor
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
K/W
0,11
0,15
Inverter FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,75
1,70
45,6
51,5
256
2,2
VF
IRRM
trr
Diode forward voltage
35
35
V
A
Peak reverse recovery current
Reverse recovery time
ns
380
3,54
7,16
1714
313
1,36
2,93
Qrr
Reverse recovered charge
Rgon=16 ꢀ
±15
600
µC
di(rec)max
/dt
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
Erec
RthJH
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Coupled thermal resistance diode-diode
Coupled thermal resistance transistor-diode
0,95
0,63
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJC
K/W
RthJHD-D
RthJHT-D
0,14
copyright Vincotech
4
Revision: 3
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