V23990-P718-*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,23
1,21
0,92
0,81
5,0
1,5
VF
Vto
rt
Forward voltage
59
59
59
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢁ
mA
6,8
0,05
Ir
1500
Thermal grease
RthJH
thickness≤50um
λ = 0,61 W/mK
K/W
Thermal resistance chip to heatsink per chip
1,15
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,36
1,38
1,00
0,89
0,01
0,01
1,9
VF
Vto
0,048
35
V
V
VD=6 V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
rt
35
mꢁ
mA
µs
0,05
5
2
Ir
1200
IG=0,5A
VD=1/2 VDRM
tGD
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
tGR
µs
tbd.
VD=2/3 VDRM
linear voltage rise
VD=2/3 VDRM
(dv/dt)cr
(di/dt)cr
tq
Tj=150°C
V/µs
A/µs
µs
1000
500
tp=200 ꢀs
42
42
Tj=150°C
IG=0,45A; f=50Hz
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VD=2/3 VDRM
tp=200 ꢀs 100
150
75
IH
VD=6 V
mA
mA
V
IG=0,45A
tp=10 ꢀs
125
IL
Latching current
1,5
50
VGT
IGT
VGD
IGD
VD=6 V
VD=6 V
Gate trigger voltage
Gate trigger current
mA
V
VD=2/3 VDRM
VD=2/3 VDRM
Gate non-trigger voltage
Gate non-trigger current
Tj=150°C
0,2
5
Tj=150°C
mA
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,16
5,8
Brake IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
6,5
2,25
0,25
650
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0015
35
V
V
1,3
2,11
2,40
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
ꢁ
20
6
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
56
56
19
Rise time
26
ns
492
577
109
167
2,06
2,42
1,79
2,79
td(off)
Turn-off delay time
Rgon=32 ꢁ
Rgoff=16 ꢁ
±15
600
35
tf
Fall time
Eon
Eoff
Cies
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
2530
132
115
205
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
QGate
nC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,96
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