V23990-P707-F40-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Inverter IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0003
8
V
V
1,3
1,88
2,16
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,001
120
0
1200
0
mA
nA
Ω
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
104
25
Rise time
28
ns
227
297
68
140
0,66
1,01
0,48
0,81
td(off)
tf
Turn-off delay time
Rgoff=64 Ω
Rgon=64 Ω
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
±15
960
8
45
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,90
K/W
Inverter FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,77
1,69
8
2,2
VF
IRRM
trr
Diode forward voltage
10
8
V
A
Peak reverse recovery current
Reverse recovery time
9
271
448
0,84
1,72
29
24
0,30
0,64
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=64 Ω
±15
600
μC
di(rec)max
/dt
A/μs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,36
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
%
ΔR/R R100=1486 Ω
-5
5
P
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
3
Revision: 1
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