V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0015
35
V
V
1,3
1,69
1,88
15
0
0,25
650
1200
0
mA
nA
20
6
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
65
26
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ohm
Rgoff=16Ohm
673
171
3,34
15
600
35
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
3,99
2,53
Cies
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
0,132
0,115
203
nF
Reverse transfer capacitance
Gate charge
nF
15
960
35
nC
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,08
n.A.
BRC inverse diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,61
1,56
2,3
Diode forward voltage
VF
Ir
3
V
250
Reverse leakage current
1200
uA
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
RthJH
RthJC
Thermal grease
thickness ≤50um λ=
0.61W/mK
3,62
n.A.
K/W
K/W
Copyright by Vincotech
5
Revision: 1