V23990-P589-A31-PM
preliminary datasheet
Output Inverter
Figure 17
Output inverter FRED
Figure 18
Output inverter FRED
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
6000
6000
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
Tj = 25°C
5000
5000
4000
3000
2000
Tj = 25°C
4000
3000
2000
1000
0
Tj = Tjmax - 25°C
1000
0
Tj = Tjmax - 25°C
I
(A)
R gon ( Ω)
75
0
5
10
15
20
25
30
35
40
45
50
C
0
15
30
45
60
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
600
°C
25/125
600
°C
V
=
=
V
V
Ω
±15
25
A
Rgon
=
VGE =
16
±15
V
Figure 19
Output inverter IGBT
Figure 20
Output inverter FRED
IGBT transient thermal impedance
as a function of pulse width
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
1.05
tp / T
1.92
D =
D =
RthJH =
RthJH =
K/W
RthJH =
1.05
K/W
K/W
RthJH =
1.92
K/W
Single device heated
AlI devices heated
Single device heated
AlI devices heated
IGBT thermal model values
FRED thermal model values
R (C/W)
0.09
Tau (s)
R (C/W)
0.09
R (C/W)
0.04
Tau (s)
R (C/W)
0.04
2.6E+00
3.2E-01
8.5E-02
1.0E-02
6.4E-04
9.5E+00
7.9E-01
1.3E-01
2.8E-02
4.1E-03
4.5E-04
0.42
0.42
0.21
0.21
0.41
0.41
0.80
0.80
0.09
0.09
0.51
0.51
0.04
0.04
0.21
0.21
0.14
0.14
copyright Vincotech
9
Revision: 1
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