V23990-P719-*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,19
1,16
0,91
0,78
0,004
0,005
1,7
VF
Vto
rt
Forward voltage
76
76
76
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢁ
0,1
Ir
1500
mA
Thermal grease
RthJH
thickness≤50um
λ = 0,61 W/mK
K/W
Thermal resistance chip to heatsink per chip
0,97
Brake IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,25
0,25
650
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,0015
35
V
V
1,3
1,80
2,02
15
0
1200
0
mA
nA
ꢁ
20
6
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
47
48
19
Rise time
25
ns
457
544
122
187
2,99
3,60
2,68
4,11
td(off)
tf
Turn-off delay time
Rgon=32 ꢁ
Rgoff=16 ꢁ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2530
132
115
205
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
nC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,93
Brake Inverse Diode
Tj=25°C
Tj=125°C
1
1,60
1,57
2,2
VF
Diode forward voltage
3
V
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,3
K/W
Brake FWD
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,75
1,73
2,3
VF
Ir
Diode forward voltage
15
25
V
ꢀA
250
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
±15
±15
300
300
21
24
IRRM
trr
A
356
522
2,83
4,56
280
137
2,83
4,56
ns
Rgon=32 ꢁ
Rgon=32 ꢁ
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
25
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,88
copyright Vincotech
3
Revision: 3
VINCOTECH [ VINCOTECH ]
