V23990-P587-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1,31
1,33
0,92
0,82
7,81
10,08
1,30
1,37
VF
Vto
rt
Forward voltage
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
Ir
1600
2
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,91
1,63
K/W
Preapplied
Phase change
material
RthJH
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
1,85
VGE(th) VCE=VGE
0,0012
75
V
V
1,05
1,64
1,83
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,0038
600
600
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
135
137
23
Rise time
29
ns
175
204
50
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
300
50
Fall time
69
1,00
2,00
1,60
2,13
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
4620
288
137
470
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
480
75
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,15
0,89
Preapplied
Phase change
material
RthJH
K/W
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,84
1,92
65
71
136
1,9
VF
IRRM
trr
Diode forward voltage
75
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
258
2,99
6,43
2980
2197
0,634
1,339
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8 ꢀ
0
300
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,51
1,27
Preapplied
Phase change
material
RthJH
copyright Vincotech
3
Revision: 2
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