V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
12,0
9,0
6,0
3,0
0,0
12,0
9,0
6,0
3,0
0,0
Eon High T
Eoff High T
Eon High T
Eoff High T
I C (A)
R G ( Ω )
0
15
30
45
60
75
90
105
0
10
20
30
40
50
With an inductive load at
With an inductive load at
Tj =
125
Tj =
125
°C
V
°C
V
V
A
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
18
600
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
18
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
8
6
4
2
0
8
Erec
6
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Erec
4
2
0
I C (A)
R G ( Ω )
0
15
30
45
60
75
90
105
0
10
20
30
40
50
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
600
±15
18
°C
V
125
600
±15
50
°C
V
V
A
=
=
=
=
V
Rgon
=
ꢀ
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5
Revision: 2.1
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