V23990-K243-A-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,02
0,94
0,88
0,75
4
1,35
VF
Vto
rt
35
35
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
6
0,1
2
Ir
1500
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
0,90
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,85
VGE(th) VCE=VGE
0,008
100
V
V
1,05
1,58
1,78
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,0052
1200
600
0
mA
nA
ꢀ
±25
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
187,2
187,2
31,5
32,8
222,5
241,8
53,3
86,9
2,29
2,92
2,43
3,08
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
300
100
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
6280
400
186
620
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
480
100
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,6
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,38
1,4
1,9
VF
IRRM
trr
100
100
V
A
92,8
112,9
167,5
247,7
5,85
10,5
3184
2578
1,1
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=8 ꢀ
300
µC
di(rec)max
/dt
A/µs
mWs
Erec
2,15
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,8
K/W
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
1670,313
ꢀ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
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