V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
0,1
0,1
tr
tf
tf
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
10
20
30
40
50
60
0
16
32
48
64
80
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
300
±15
16
°C
125
300
±15
30
°C
V
V
A
=
=
=
=
V
V
ꢀ
ꢀ
Rgon
Rgoff
=
=
16
Figure 11
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
trr
0,5
0,4
0,3
0,2
0,1
trr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
trr
trr
Tj = 25°C
Tj = 25°C
0,0
0
I C (A)
R gon ( Ω )
16
32
48
64
80
0
10
20
30
40
50
60
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
25/125
°C
V
25/125
°C
V
A
V
25/125
=
=
300
±15
16
300
V
30
Rgon
=
VGE =
ꢀ
±15
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6
Revision: 3.1
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